vishay siliconix SI1012CR document number: 67519 s11-0449-rev. a, 07-mar-11 www.vishay.com 1 n-channel 20 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? 100 % r g te s t e d ? gate-source esd protected: 1000 v ? compliant to rohs directive 2002/95/ec applications ? load/power switching for portable devices ? drivers: relays, solenoid s, lamps, hammers, displays, memories ? battery operated systems ? power supply converter circuits product summary v ds (v) r ds(on) ( ? )i d (a) q g (typ.) 20 0.396 at v gs = 4.5 v 0.5 0.75 0.456 at v gs = 2.5 v 0.2 0.546 at v gs = 1.8 v 0.2 notes: a. surface mounted on 1" x 1" fr4 board. b. t = 5 s. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) a t a = 25 c i d 0.63 a, b a t a = 70 c 0.5 a, b pulsed drain current (t = 300 s) i dm 2 continuous source-drain diode current t a = 25 c i s 0.2 a, b a maximum power dissipation a t a = 25 c p d 0.24 a, b w t a = 70 c 0.15 a, b operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b t ?? 5 s r thja 440 530 c/w steady state 540 650 orderin g information: SI1012CR-t1-ge3 (lead (p b )-free and halogen-free) markin g code k xx lot tracea b ility and date code part # code y y to p v ie w 2 1 s d g 3 sc-75a www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com 2 document number: 67519 s11-0449-rev. a, 07-mar-11 vishay siliconix SI1012CR notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 20 v v ds temperature coefficient ? v ds /t j i d = 250 a 17 mv/c v gs(th) temperature coefficient ? v gs(th) /t j - 1.8 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.4 1.0 v gate-source leakage i gss v ds = 0 v, v gs = 8 v 30 a v ds = 0 v, v gs = 4.5 v 1 zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 v ds = 20 v, v gs = 0 v, t j = 85 c 10 on-state drain current a i d(on) v ds = ? 5 v, v gs = 4.5 v 2 a drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 0.6 a 0.330 0.396 ? v gs = 2.5 v, i d = 0.3 a 0.380 0.456 v gs = 1.8 v, i d = 0.3 a 0.420 0.546 forward transconductance g fs v ds = 10 v, i d = 0.5 a 7.5 s dynamic b input capacitance c iss v ds = 10 v, v gs = 0 v, f = 1 mhz 43 pf output capacitance c oss 14 reverse transfer capacitance c rss 8 total gate charge q g v ds = 10 v, v gs = 8 v, i d = 0.6 a 1.3 2 nc v ds = 10 v, v gs = 4.5 v, i d = 0.6 a 0.75 1.2 gate-source charge q gs 0.15 gate-drain charge q gd 0.13 gate resistance r g f = 1 mhz 2.4 12.2 24.4 ? tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 20 ? i d ? 0.5 a, v gen = 4.5 v, r g = 1 ? 11 20 ns rise time t r 16 24 turn-off delay time t d(off) 26 39 fall time t f 11 20 drain-source body diode characteristics pulse diode forward current a i sm 2a body diode voltage v sd i s = 0.5 a 0.8 1.2 v body diode reverse recovery time t rr i f = 0.5 a, di/dt = 100 a/s 10 15 nc body diode reverse recovery charge q rr 24 ns reverse recovery fall time t a 5 reverse recovery rise time t b 5 www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 67519 s11-0449-rev. a, 07-mar-11 www.vishay.com 3 vishay siliconix SI1012CR typical characteristics (25 c, unless otherwise noted) gate current vs. gate-source voltage output characteristics on-resistance vs. drain current 0 0.2 0.4 0.6 0.8 0 2 4 6 8 10 12 14 i gss - gate current (ma) v gs - gate-source voltage (v) t j = 25 c 0 0.5 1 1.5 2 00.511.52 i d - drain current (a) v ds - drain-to-source voltage (v) v gs = 5 v thru 2 v v gs = 1 v v gs = 1.5 v 0.20 0.40 0.60 0.80 00.511.52 r ds(on) - on-resistance () i d - drain current (a) v gs = 1.8 v v gs = 2.5 v v gs = 4.5 v gate current vs. gate-source voltage transfer characteristics capacitance 1.0e-09 1.0e-08 1.0e-07 1.0e-06 1.0e-05 1.0e-04 0 4 7 11 14 i gss - gate current (a) v gs - gate-to-source voltage (v) t j = 150 c t j = 25 c 0 0.1 0.2 0.3 0.4 0.5 0 0.3 0.6 0.9 1.2 1.5 i d - drain current (a) v gs - gate-to-source voltage (v) t c = 125 c t c = - 55 c t c = 25 c 0 15 30 45 60 0 5 10 15 20 c - capacitance (pf) v ds - drain-to-source voltage (v) c iss c oss c rss www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com 4 document number: 67519 s11-0449-rev. a, 07-mar-11 vishay siliconix SI1012CR typical characteristics (25 c, unless otherwise noted) gate charge soure-drain diode forward voltage threshold voltage 0 2 4 6 8 00.511.5 v gs - gate-to-source voltage (v) q g - total gate charge (nc) v ds = 16 v i d = 0.6 a v ds = 5 v v ds = 10 v 0.1 1 10 0.0 0.3 0.6 0.9 1.2 1.5 i s - source current (a) v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c 0.35 0.45 0.55 0.65 0.75 - 50 - 25 0 25 50 75 100 125 150 v gs(th) (v) t j -temperature ( c) i d = 250 a on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.6 0.8 1.0 1.2 1.4 1.6 -50-250 255075100125150 r ds(on) -on-resistance (normalized) t j - junction temperature ( c) i d = 0.5 a v gs = 4.5 v v gs = 2.5 v 0 0.2 0.4 0.6 0.8 012345 r ds(on) - on-resistance () v gs - gate-to-source voltage (v) t j = 125 c t j = 25 c i d = 0.5 a 0 0.6 1.2 1.8 2.4 3 0.01 0.1 1 10 100 power (w) time (s) www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 67519 s11-0449-rev. a, 07-mar-11 www.vishay.com 5 vishay siliconix SI1012CR typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67519 . safe operating area, junction-to-ambient 0.01 0.1 1 10 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specied 100 ms limited by r ds(on) * 1 ms t c = 25 c single pulse bvdss limited 10 ms 10 s, dc 1 s power derating, junction-to-ambient 0 0.06 0.12 0.18 0.24 0 255075100125150 power (w) t a - ambient temperature ( c) normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =650 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted www.datasheet.co.kr datasheet pdf - http://www..net/
package information www.vishay.com vishay siliconix revision: 08-aug-11 1 document number: 71348 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sc-75a: 3-leads notes dimensions in millimeters will govern. 1. dimension d does not include mold flash, protrusions or gate burrs. mold flash protrusions or gate burrs shall not exceed 0.10 mm per end. dimension e1 does not include interlead flash or protrusion. interlead flash or protrusion shall not exceed 0.10 mm per side. 2. dimensions d and e1 are determi ned at the outmost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interelead flash, but includi ng any mismatch between the top and bottom of the plastic body. 3. datums a, b and d to be determined 0.10 mm from the lead tip. 4. terminal positions are shown for reference only. 5. these dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. c m b a ? 2x 1 2 3 a 1 2 d c bbb 4 b 3 d 3 d d d bbb d bbb d e2 b1( b 1) 3 e1 2xb1 e1 2x e3 2 e e/2 d bbb 4x d seating plane a a2 a1 base metal with tin planting section b-b 5 b1 b 1 c c1 l2 l l1 b b 2x 1 ddd c c 1 1 dimensions tolerances aaa 0.10 bbb 0.10 ccc 0.10 ddd 0.10 millimeters dim. min. nom. max. note a- -0.80 a 1 0.00 - 0.10 a 2 0.65 0.70 0.80 b 1 0.19 - 0.24 5 b 1 0.17 - 0.21 c 0.13 - 0.15 5 c 1 0.10 - 0.12 5 d 1.48 1.575 1.68 1, 2 e 1.50 1.60 1.70 e 1 0.66 0.76 0.86 1, 2 e 1 0.50 bsc e 2 1.00 bsc e 3 0.50 bsc l 0.15 0.205 0.30 l 1 0.40 ref l 2 0.15 bsc ? 0 - 8 ? 1 4 - 10 ecn: e11-2210-rev. d, 08-aug-11 d w g: 5868 www.datasheet.co.kr datasheet pdf - http://www..net/
application note 826 vishay siliconix document number: 72603 www.vishay.com revision: 21-jan-08 19 application note recommended minimum pads for sc-75a: 3-lead 0.014 (0.356) 0.071 (1.803) recommended mi nimum pads dimensions in inches/(mm) 0.264 (0.660) 0.054 (1.372) 0.031 (0.798) 0.020 (0.503) return to index return to index www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners. www.datasheet.co.kr datasheet pdf - http://www..net/
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